摘要 (Abstract) ：
Spin–orbit torques (SOTs) provide an energy-efficient approach for electrically manipulating magnetization and hold promise for next-generation memory and computing technologies beyond conventional electronics. Compared to spin-transfer torque (STT) devices, SOT-based devices offer advantages such as faster switching speeds, improved endurance, and a broader selection of spin source materials. Despite the discovery of various materials capable of generating significant SOTs, achieving efficient, deterministic, field-free switching of perpendicular magnetization remains a challenge, which is essential for practical applications in high-density magnetic memory. In this talk, I will review recent progress on oxide spin source materials, which offer unique advantages for SOT generation and control, including enhanced efficiency and tunable properties. I will present our recent demonstration of high spin torque efficiency in a quasi-two-dimensional metallic oxide. In addition, I will discuss our results on voltage-controlled, magnon-mediated spin torque enabled by multiferroic materials. Finally, I will give an outlook on future opportunities in oxide spintronics.
