摘要 (Abstract) ：
For a comprehensive understanding of complex semiconductor heterostructures and the physics of devices based on them, a systematic determination and correlation of the structural, chemical, electronic, and optical properties on a nanometer scale is essential. Luminescence techniques belong to the most sensitive, non-destructive methods of semiconductor research. The combination of luminescence spectroscopy – in particular at liquid He temperatures - with the high spatial resolution of a scanning transmission electron microscopy (STEM) as realized by the technique of low temperature cathodoluminescence microscopy in a STEM (STEM-CL), provides a unique, extremely powerful tool for the optical nano-characterization of quantum structures.
